EE 230 Electronic Circuits & Systems G. Tuttle

Drift current practice problems
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A piece of silicon is n-type with a uniform donor doping concentration of ND = 1.0e+19 cm-3.
The electron mobility is μn = 75 cm2/V·s.
What are the conductivity and resistivity of this silicon?

You would like to make rectangular resistor with value R = 120 Ω in this silicon.
The resistor's length is L = 0.4 mm and the thickness is t = 7 μm.
What width should the resistor have?

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