*pn*-junction electrostatics practice problems

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A silicon p-n junction is uniformly doped with n-type *N _{D}* = 4.0e+17 cm

^{-3}on one side and p-type doping

*N*8.0e+17 cm

_{A}^{-3}on the other.

Find the following at room temperature:

- the built-in potential
- the total depletion-layer width at zero bias
- the depletion widths on the n- and p-sides
- the maximum magnitude of the electric field
- the capacitance at zero-bias

Note: For silicon,

- the relative permittivity is ε
_{r}= 11.8 - the intrinsic carrier concentration is n
_{i}= 6.000e+9 cm^{-3} - the conduction band density-of-states is N
_{C}= 2.800e+19 cm^{-3} - the valence band density-of-states is N
_{V}= 1.000e+19 cm^{-3} - the band gap energy is E
_{G}= 1.120 eV.