pn-junction electrostatics practice problems
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A GaAs p-n junction is uniformly doped with n-type N_D = 9.0e+16 cm^-3 on one side and p-type doping N_A 4.0e+16 cm^-3 on the other.

Find the following at room temperature:

• the built-in potential
• the total depletion-layer width at zero bias
• the depletion widths on the n- and p-sides
• the maximum magnitude of the electric field
• the capacitance at zero-bias

Note: For GaAs,

• the relative permittivity is ε_r = 13
• the intrinsic carrier concentration is n_i = 2.100e+6 cm^-3
• the conduction band density-of-states is N_C = 4.300e+17 cm^-3
• the valence band density-of-states is N_V = 8.000e+18 cm^-3
• the band gap energy is E_G = 1.420 eV.

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