pn-junction current practice problems
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A uniformly doped silicon p-n junction has n-type doping of 6.0e+15 cm-3 and p-type doping of 7.0e+17 cm-3.
The width of the n-type quasi-neutral region is 3 μm, and the width of the p-type quasi-neutral region is 10 μm.
The diode area is 400 μm x 400 μm.
The applied voltage is -10 V.
Calculate the diode current at room temperature:
Note: For silicon,
- the intrinsic carrier concentration is ni = 6.000e+9 cm-3
- the electron diffusion coefficient is 35 cm2/s, and
- the hole diffusion coefficient is 10 cm2/s.
- Jns= 2.880e-13 A/cm2.
- Jps= 3.200e-11 A/cm2.
- IS= 5.166e-14 A.
- ID= -5.166e-14 A.