*pn*-junction current practice problems

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A uniformly doped GaAs p-n junction has n-type doping of 6.0e+16 cm^{-3} and p-type doping of 1.0e+17 cm^{-3}.

The width of the n-type quasi-neutral region is 9 μm, and the width of the p-type quasi-neutral region is 4 μm.

The diode area is 500 μm x 500 μm.

The applied voltage is 0.5 V.

Calculate the diode current at room temperature:

Note: For GaAs,

- the intrinsic carrier concentration is n
_{i}= 2.100e+6 cm^{-3} - the electron diffusion coefficient is 180 cm
^{2}/s, and - the hole diffusion coefficient is 10 cm
^{2}/s.