*pn*-junction current practice problems

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A uniformly doped silicon p-n junction has n-type doping of 6.0e+15 cm^{-3} and p-type doping of 7.0e+17 cm^{-3}.

The width of the n-type quasi-neutral region is 3 μm, and the width of the p-type quasi-neutral region is 10 μm.

The diode area is 400 μm x 400 μm.

The applied voltage is -10 V.

Calculate the diode current at room temperature:

Note: For silicon,

- the intrinsic carrier concentration is n
_{i}= 6.000e+9 cm^{-3} - the electron diffusion coefficient is 35 cm
^{2}/s, and - the hole diffusion coefficient is 10 cm
^{2}/s.