pn-junction current practice problems
Refresh the page to get a new problem.
A uniformly doped GaAs p-n junction has n-type doping of 1.0e+17 cm-3 and p-type doping of 9.0e+17 cm-3.
The width of the n-type quasi-neutral region is 4 μm, and the width of the p-type quasi-neutral region is 6 μm.
The diode area is 100 μm x 100 μm.
The applied voltage is 0.65 V.
Calculate the diode current at room temperature:
Note: For GaAs,
- the intrinsic carrier concentration is ni = 2.100e+6 cm-3
- the electron diffusion coefficient is 180 cm2/s, and
- the hole diffusion coefficient is 10 cm2/s.