EE 436 Physics of Transistors G. Tuttle

MOS threshold practice problems
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An NMOS structure (i.e. p-type body) has p-type doping of 2000000000000000 cm-3. The gate oxide thickness is 5 nm. The gate is made of heavily n-type polysilicon.

Calculate the threshold voltage and gate capacitance at room temperature.

Note: (All quantities are for room temperature: T = 300 K.)