EE 436 Physics of Transistors G. Tuttle

BJT practice problems
Refresh the page to get a new problem.


An ideal, uniformly doped silicon npn transistor has the following doping and widths.

NPN emitter base collector
doping NDE = 2.7e+17 cm-3 NAB = 9.0e+15 cm-3 NDC = 1.5e+15 cm-3
widths WE = 5 μm WB = 0.5 μm WC = 7 μm

The BJT area is 500 μm x 500 μm.

Calculate βF and IS for the BJT.

If the BJT is biased in forward active operation, with VBE = 0.65 V, calculate the base, collector, and emitter currents, assuming room temperature operation.

Note: For silicon,


Answers