EE 432/532 Semiconductor Fabrication G. Tuttle

Oxidation practice problems
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Read the Oxidation example calculations class notes.


A (100)-oriented silicon wafer has an intial oxide thickness of 0.2 μm.

The wafer will be oxidized at a temperature of 1100°C using dry oxidation.

If the oxidation lasts for 2 hr, what will be the total thickness of the resulting oxide?

Answer