Ion Implantation practice problems
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Read the Ion implantation class notes.

Boron is implanted into a silicon wafer that has a background doping of 7x10¹⁶ cm^–3.

The implant energy is 30 keV. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the dose needed to so that the implanted profile has a peak concentration of N_P = 9x10¹⁸ cm^–3.
Then calculate the corresponding junction depth(s).

Answer