Ion Implantation practice problems
Refresh the page to get a new problem.
Read the Ion implantation class notes.
Arsenic is implanted into a silicon wafer that has a background doping of 9x1016 cm–3.
The implant energy is 300 keV, and the implant dose is 7.0e+14 cm-2. (See the notes for range and straggle plots.)
After the implant, the wafer is annealed at 1050°C for 80 min.
(The Arsenic diffusion pre-factor coefficient is Do = 9.17 cm2/s and the activation energy is EA = 3.99 eV.)
Determine the peak concentration and the junction depth(s) of the implanted profile before the anneal. The calculate the same quantities after the anneal.