Ion Implantation practice problems
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Read the Ion implantation class notes.

Phosphorus is implanted into a silicon wafer that has a background doping of 3x10¹⁶ cm^–3.

The implant energy is 300 keV, and the implant dose is 9.0e+13 cm^-2. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the peak concentration and the junction depth(s) of the implanted profile.

Answer