Ion Implantation practice problems
Refresh the page to get a new problem.
Read the Ion implantation class notes.
Phosphorus is implanted into a silicon wafer that has a background doping of 1x1017 cm–3.
The implant energy is 300 keV, and the implant dose is 1.0e+13 cm-2. (See the notes for range and straggle plots.)
There is no anneal following the implant.
Determine the peak concentration and the junction depth(s) of the implanted profile.