Diffusion practice problems
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Read the Diffusion example calculations class notes.
Boron is diffused into a silicon wafer using a constant-dose (Gaussian) process. The process parameters are:
- dose: Q = 1x1013 cm–2
- temperature: T = 1000°C, and
- time: t = 3 hr.
The wafer has a constant background doping of NB = 4x1015 cm–3.
Determine the surface concentration and the junction depth at the end of the diffusion.