Diffusion practice problems
Refresh the page to get a new problem.
Read the Diffusion example calculations class notes.
Arsenic is diffused into a silicon wafer using a constant-dose (Gaussian) process. The final profile must meet the following requirements:
- surface concentration: N(0) = 7x1017 cm–3
- junction depth: xj = 1.1 μm, and
The wafer has a constant background doping of NB = 5x1014 cm–3.
Design the diffusion (choose values for Q and Dt) to meet the requirements.Also, choose a temperature and a time to give the correct Dt. (There are many possible answers. The values given below are one possible combination.)