EE 432/532 Semiconductor Fabrication G. Tuttle

Diffusion practice problems
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Read the Diffusion example calculations class notes.


Boron is diffused into a silicon wafer using a constant-dose (Gaussian) process. The process parameters are:

The wafer has a constant background doping of NB = 4x1015 cm–3.

Determine the surface concentration and the junction depth at the end of the diffusion.

Answer