Diffusion practice problems
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Read the Diffusion example calculations class notes.
Phosphorus is diffused into a silicon wafer using a constant-source (erfc) process. The process parameters are:
- temperature: T = 1100°C, and
- time: t = 2.17 hr.
The wafer has a constant background doping of NB = 8x1016 cm–3.
The surface concentration during the diffusion is determined by the solid-solubility limit.
For this diffusion use Ns = 1x1021 cm–3.
Determine the diffused dose and the junction depth at the end of the diffusion.
Link to error-function table, if needed.